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        1. 亚洲香蕉av在线一区二区三区_久久麻豆av_国产h在线播放_免费看国产曰批40分钟妖精_来一水AV@lysav

          產(chǎn)品展示
          當(dāng)前位置:首頁(yè) > 產(chǎn)品展示 > IGBT模塊 > HITACHI日立IGBT模塊 >供應(yīng)日立IGBT模塊41A296305ECP2
          供應(yīng)日立IGBT模塊41A296305ECP2

          供應(yīng)日立IGBT模塊41A296305ECP2

          型    號(hào): MBN1200D25B
          報(bào)    價(jià): 9999
          分享到:

          供應(yīng)日立IGBT模塊41A296305ECP2
          北京京誠(chéng)宏泰科技
          ABB的 IGBT功率模塊為電壓從1700伏特至6500伏特的單一IGBT,雙/橋臂式IGBT,斬波和雙二極管模塊。大功率的HiPak IGBT模塊具備軟開(kāi)關(guān)低損耗和高極限較寬的SOA兩大特點(diǎn)。

          詳細(xì)資料:

          供應(yīng)日立IGBT模塊41A296305ECP2

          北京京誠(chéng)宏泰科技有限公司原裝正品現(xiàn)貨供應(yīng)日立IGBT模塊41A296305ECP2

          日立IGBT特點(diǎn):

          • 耐熱疲勞耐量大
          • 快恢復(fù)開(kāi)關(guān)和低損耗IGBT模塊
          • 通過(guò)高速軟恢復(fù)二極管減少噪音
          • 通過(guò)低輸入電容MOS門(mén)極實(shí)現(xiàn)低功率驅(qū)動(dòng)
          • 可靠性高、耐久性高

          日立IGBT技術(shù)

          TrenchTrench Gate
          降低Vce(sat)
          LiPTLow Injection Punch Through
          減少開(kāi)關(guān)損耗
          sLiPtSoft Low Injection Punch Through
          低噪音,降低峰值電壓
          HiGTHigh Conductivity IGBT
          降低Vce(sat)

          北京京誠(chéng)宏泰科技有限公司原裝正品現(xiàn)貨

          PackageIC(A)Type Name
          (Update)
          FeatureStatus*1Application Note
          1in1 IGBT1200
          • MBN1200E17D
            (PDF format, 293kBytes)
            (2013/03/01)
           M 
          1600
          • MBN1600E17D
            (PDF format, 594kBytes)
            (2013/03/01)
           M 
          1800
          • MBN1800E17DD
            (PDF format, 679kBytes)
            (2013/03/01)
          Soft diodeM 
          2400
          • MBN2400E17D
            (PDF format, 282kBytes)
            (2014/08/07)
           M 
          2in1 IGBT600
          • MBM600E17D
            (PDF format, 512kBytes)
            (2012/8/28)
           M
          • 2in1 Application Note
            (PDF format, 248kBytes)
          1200
          • MBM1200E17D
            (PDF format, 589kBytes)
            (2013/03/01)
           M
          • 2in1 Application Note
            (PDF format, 248kBytes)
          600
          • MBM600F17D
            (PDF format, 1.02MBytes)
            (2013/03/01)
          Direct liquid coolM
          • technical paper
            (PDF format, 163kBytes)*2
          • 2in1 Application Note
            (PDF format, 248kBytes)
          Chopper1200
          • MBL1200E17D
            (PDF format, 325kBytes)
            (2013/03/01)
           M 
          2in1
          Diode
          900
          • MDM900E17D
            (PDF format, 301kBytes)
            (2013/03/01)
           M 
          1200
          • MDM1200E17D
            (PDF format, 305kBytes)
            (2013/03/01)
           M 

          *1北京京誠(chéng)宏泰科技有限公司原裝正品現(xiàn)貨

          M:Mass production, W:Working sample, D:Discontinued

          *2

          The first publication of the papers was at PCIM Europe Conference2010.

          1700V E-Version

          • Low VCE(sat)
          • Soft switching
          PackageIC(A)Type Name
          (Update)
          FeatureStatus*1Application Note
          1in1 IGBT1200
          • MBN1200E17E
            (PDF format, 679kBytes)
           M 
          1800
          • MBN1800E17E
            (PDF format, 827kBytes)
           M 

          *1

          M:Mass production, W:Working sample, D:Discontinued

          1700V F-Version

          • Advanced Trench HiGT - sLiPT
          • Low VCE(sat)
          • Soft switching
          • Low spike voltage
          PackageIC(A)Type Name
          (Update)
          FeatureStatus*1Application Note
          1in1 IGBT1600
          • MBN1600E17F
            (PDF format,459kBytes)
            (2015/3/10)
           M
          • technical paper
            (PDF format, 382kBytes)*2
          2400
          • MBN2400E17F
            (PDF format, 436kBytes)
            (2012/11/30)
           W
          • technical paper
            (PDF format, 382kBytes)*2
          3600
          • MBN3600E17F
            (PDF format, 408kBytes)
            (2015/3/10)
           M
          • technical paper
            (PDF format, 382kBytes)*2
          2in1 IGBT800
          • MBM800E17F
            (PDF format,338kBytes)
            (2015/10/09)
           W
          • technical paper
            (PDF format, 382kBytes)*2
          • 2in1 Application Note
            (PDF format, 248kBytes)
          1200
          • MBM1200E17F
            (PDF format,771kBytes)
            (2015/07/29)
           M
          • technical paper
            (PDF format, 382kBytes)*2
          • 2in1 Application Note
            (PDF format, 248kBytes)
          Chopper1200
          • MBL1200E17F
            (PDF format,768kBytes)
            (2015/10/09)
           M
          • technical paper
            (PDF format,382kBytes)*2
          1600
          • MBL1600E17F
            (PDF format,618kBytes)
            (2015/10/09)
           M
          • technical paper
            (PDF format,382kBytes)*2
          •  

          MBN1200E25C 北京京誠(chéng)宏泰科技有限公司原裝正品現(xiàn)貨

          3300V A-Version

          • Standard 2nd Generation
          PackageIC(A)Type Name
          (Update)
          FeatureStatus*1Application Note
          1in1
          Diode
          1200
          • MDN1200D33
            (PDF形式, 170kBytes)
           M 

          *1

          M:Mass production, W:Working sample, D:Discontinued

          3300V C-Version

          • Standard 3rd generation Planer IGBT
          PackageIC(A)Type Name
          (Update)
          FeatureStatus*1Application Note
          1in1 IGBT1200
          • MBN1200E33C
            (PDF形式, 390kBytes)
           M 
          Chopper800
          • MBL800E33C
            (PDF形式, 504kBytes)
           M 

          *1

          M:Mass production, W:Working sample, D:Discontinued

          3300V D-Version

          • Planer IGBT - LiPT
          • Low switching loss
          PackageIC(A)Type Name
          (Update)
          FeatureStatus*1Application Note
          1in1 IGBT800
          • MBN800E33D
            (PDF形式, 409kBytes)
            (2013/03/01)
           M 
          800
          • MBN800E33D-AX
            (PDF形式, 316kBytes)
            (2013/07/01)
          • Low recovery loss
          • For high frequency application
          M 
          1200
          • MBN1200E33D
            (PDF形式, 277kBytes)
            (2013/03/01)
           M 
          1200
          • MBN1200H33D
            (PDF形式, 335kBytes)
            (2013/03/01)
          • High isolation package
          M 
          2in1 IGBT400
          • MBM400E33D-MFR
            (PDF形式,702kBytes) (2015/10/09)
          • Ultra low switching loss and recovery loss
          • For high frequency application
          M
          • technical paper *2
            (PDF形式、724kBytes)
          • 2in1 Application Note
            (PDF形式、248kBytes)
          Chopper400
          • MBL400E33D
            (PDF形式, 695kBytes)
            (2013/03/01)
           M 
          800
          • MBL800E33D
            (PDF形式, 701kBytes)
            (2013/03/01)
           M 
          2in1
          Diode
          800
          • MDM800E33D
            (PDF形式, 185kBytes)
            (2013/03/01)
           M 
          1200
          • MDM1200E33D
            (PDF形式, 224kBytes)
            (2013/03/01)
           M 

          *1

          M:Mass production, W:Working sample, D:Discontinued

          *2

          The first publication of the papers was at PCIM Europe Conference 2012.

          3300V E-Version

          • Planer HiGT - sLiPT
          • Low VCE(sat)
          • Soft switching
          PackageIC(A)Type Name
          (Update)
          FeatureStatus*1Application Note
          1in1 IGBT800
          • MBN800E33E
            (PDF形式, 591kBytes)
            (2012/11/30)
           M 
          1200
          • MBN1200E33E
            (PDF形式,468kBytes)
            (2015/03/10)
           M 
          Chopper800
          • MBL800E33E
            (PDF形式, 443kBytes)
            (2013/03/01)
           M 

          *1

          M:Mass production, W:Working sample, D:Discontinued

          3300V E2-Version

          • Fine Planer HiGT - sLiPT
          • Low VCE(sat)
          • Soft switching
          PackageIC(A)Type Name
          (Update)
          FeatureStatus*1Application Note
          1in1 IGBT1000
          • MBN1000E33E2
            (PDF形式, 286kBytes)
            (2013/07/01)
           M 
          1500
          • MBN1500E33E2
            (PDF形式, 353kBytes)
            (2013/07/01)
           M 
          2in1 IGBT500
          • MBM500E33E2-R
            (PDF形式, 559kBytes)
            (2014/08/07)
           M
          • 2in1 Application Note
            (PDF形式, 248kBytes)
          Chopper1000
          • MBL1000E33E2-B
            (PDF形式, 227kBytes)
            (2012/11/30)
           M 

          *1

          M:Mass production, W:Working sample, D:Discontinued

          3300V E3-Version

          • Fine Planer HiGT - sLiPT
          • Soft switching
          • Low spike voltage
          • For large Ls circuit, series connection
          PackageIC(A)Type Name
          (Update)
          FeatureStatus*1Application Note
          1in1 IGBT1500
          • MBN1500E33E3
            (PDF形式, 371kBytes)
            (2013/07/01)
           M 
          2in1 IGBT250
          • MBM250H33E3
            (PDF形式, 502kBytes)
            (2015/07/29)
          • High isolation package
          M 

          *1

          M:Mass production, W:Working sample, D:Discontinued

          3300V F-Version

          • Advanced Trench HiGT - sLiPT
          • Low VCE(sat)
          • High current rating
          • RoHS compliance
          PackageIC(A)Type Name
          (Update)
          FeatureStatus*1Application Note
          1in1 IGBT1200
          • MBN1200F33F
            (PDF形式,698kBytes)
            (2015/05/15)
           M
          • technical paper
            (PDF形式, 388kBytes)*2
          1800
          • MBN1800F33F
            (PDF形式,661kBytes)
            (2015/05/15)
           M
          • technical paper
            (PDF形式, 724kBytes)*3
          •  

          4500V D-Version

          • Planer IGBT - LiPT
          • Low switching loss
          PackageIC(A)Type Name
          (Update)
          FeatureStatus*1Application Note
          1in1 IGBT600
          • MBN600E45A
            (PDF形式, 290kBytes)
           M 
          900
          • MBN900D45A
            (PDF形式, 298kBytes)
           M 
          2in1
          Diode
          600
          • MDM600E45A
            (PDF形式, 198kBytes)
           M 
          900
          • MDM900E45A
            (PDF形式, 158kBytes)
           D 

          *1

          M:Mass production, W:Working sample, D:Discontinued

          4500V E2-Version

          • Fine Planer HiGT - sLiPT
          • Low VCE(sat)
          • Soft switching
          PackageIC(A)Type Name
          (Update)
          FeatureStatus*1Application Note
          1in1 IGBT800
          • MBN800H45E2
            (PDF形式,468kBytes)
            (2015/05/15)
          • High isolation package
          M 
          1200
          • MBN1200H45E2
            (PDF形式,543kBytes) (2015/03/10)
          • High isolation package
          M 
          2in1
          Diode
          800
          • MDM800H45E2
            (PDF形式,425kBytes) (2015/10/09)
          • High isolation package
          M 
          1200
          • MDM1200H45E2
            (PDF形式, 291kBytes) (2013/07/01)
          • High isolation package
          M 

          *1

          M:Mass production, W:Working sample, D:Discontinued

          4500V E2-H-Version

          • Fine Planer HiGT - sLiPT
          • Low switching loss
          PackageIC(A)Type Name
          (Update)
          FeatureStatus*1Application Note
          1in1 IGBT800
          • MBN800H45E2-H
            (PDF形式,477kBytes) (2015/05/15)
          • High isolation package
          M 
          1200
          • MBN1200H45E2-H
            (PDF形式,577kBytes) (2015/03/10)
          • High isolation package
          M 
          2in1 IGBT200
          • MBM200H45E2-H
            (PDF形式,528kBytes) (2015/03/10)
          • High isolation package
          M 
          2in1
          Diode
          800
          • MDM800H45E2-H
            (PDF形式,252kBytes) (2013/07/01)
          • High isolation package
          W 
          1200
          • MDM1200H45E2-H
            (PDF形式,227kBytes) (2015/03/10)
          • High isolation package
          M 

          *1

          M:Mass production, W:Working sample, D:Discontinued

          4500V F-Version

          • Advanced Trench HiGT - sLiPT
          • Low VCE(sat)
          • High current rating
          • RoHS compliance
          PackageIC(A)FeatureApplication Note
          1in1
          IGBT
          1000
          • High isolation package
          • technical paper*2
            (PDF形式, 1400kBytes)
          1500
           

           

          6500V E2-Version

          • Fine Planer HiGT - sLiPT
          • Low VCE(sat)
          • Soft switching
          PackageIC(A)Type Name
          (Update)
          FeatureStatus*1Application Note
          1in1 IGBT500
          • MBN500H65E2
            (PDF形式, 336kBytes)
            (2013/07/01)
          • High isolation package
          M 
          750
          • MBN750H65E2
            (PDF形式,430kBytes)
            (2015/03/10)
          • High isolation package
          M 
          2in1
          Diode
          500
          • MDM500H65E2
            (PDF形式, 255kBytes)
            (2013/07/01)
          • High isolation package
          M 
          750
          • MDM750H65E2
            (PDF形式, 250kBytes)
            (2013/07/01)
          • High isolation package
          M 

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          亚洲香蕉av在线一区二区三区_久久麻豆av_国产h在线播放_免费看国产曰批40分钟妖精_来一水AV@lysav

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